Dual Enhancement Mode Field Effect Transistor(N and P Channel)
CEM9939
N-Channel
BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1...
Description
CEM9939
N-Channel
BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage
1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150
ID=250 A
5
Tj, Junction Temperature ( C)
Tj, Junction Temperature ( C)
Figure 5. Gate Threshold Variation with Temperature
Figure 6. Breakdown Voltage Variationwith Temperature
VGS, Gate to Source Voltage (V)
13.0
20.0
9.0 7.0 5.0 VDS=15V 2.5 0 0 2 4 6 8 10
-ID, Drain Current (A)
11.0
10.0 5.0
1.0 0 0.3 0.6 0.9 1.2 1.5
IDS, Drain-Source Current (A)
VDS, Body Diode Forward Voltage (V)
Figure 7. Transconductance Variation with Temperature
Figure 8. Body Diode Forward VoltageVariation with Source Current
5-171
1.15 1.10 1.05 1.00 0.95 0.90 0.85 -25 0 25 50 75 100 125 150 ID=250£gA
...
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