CEM9953A

CEM9953A Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -3.5A, RDS(ON) = 80mΩ @VGS = -10V. RDS(ON) = 130mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package. D1 D1 D2 D2 876 5 5 SO-8 1 123 4 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted Parameter Symbol Limit Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a VDS -30 VGS ±20 ID -3.5 IDM -14 Maximum Power Dissipation PD 2.0 Operating and Store Temperature Range TJ,Tstg -55 to 150 Thermal Characteristics Parameter Thermal Resistance, Junction-to-Ambient b Symbol RθJA Limit 62.5 Units V V A A W C Units C/W 2002.July 5 - 267 http://www.cetsemi.com CEM9953A Electrical Characteristics TA = 25 C unless otherwise noted Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdo...