CEN-U45
NPN SILICON DARLINGTON TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR C...
CEN-U45
NPN SILICON DARLINGTON
TRANSISTOR
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 is a
NPN silicon Darlington
transistor designed for general purpose amplifier and driver applications where high gain and high power dissipation is required.
MARKING: FULL PART NUMBER
TO-202 CASE
APPLICATIONS: Designed for general purpose
amplifiers and drivers
FEATURES: High Collector Current (2.0A) High DC Current Gain (25K MIN)
MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance
SYMBOL VCBO VCEO VCES VEBO IC PD PD TJ, Tstg ΘJA ΘJC
50 40 40 12 2.0 2.0 10 -65 to +150 62.5 12.5
ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted)
SYMBOL
TEST CONDITIONS
MIN
ICBO
VCB=30V
IEBO
VEB=10V
BVCBO
lC=100μA
50
BVCES
lC=100μA
40
BVEBO
lE=10μA
12
VCE(SAT)
lC=1.0A, IB=2.0mA
VCE(SAT)
lC=200mA, IB=2.0mA
VBE(SAT)
lC=1.0A, IB=2.0mA
VBE(ON)
VCE=5.0V, IC=1.0A
hFE VCE=5.0V, IC=200mA
25K
hFE VCE=5.0V, IC=500mA
15K
hFE VCE=5.0V, lC=1.0A
4.0K
fT VCE=5.0V, lC=200mA, f=100MHz 100
Cob VCB=10V, IE=0, f=1.0MHz
MAX 100 100
1.5 1.0 2.0 2.0 150K
8.0
UNITS V V V V A W W °C
°C/W °C/W
UNITS nA nA V V V V V V V
MHz pF
R2 (23-January 2012)
CEN-U45
NPN SILICON DARLINGTON
TRANSISTOR
TO-202 CASE - MECHANICAL OUTL...