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CEN-U45

Central Semiconductor Corp

NPN SILICON DARLINGTON TRANSISTOR

CEN-U45 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR C...


Central Semiconductor Corp

CEN-U45

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Description
CEN-U45 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CEN-U45 is a NPN silicon Darlington transistor designed for general purpose amplifier and driver applications where high gain and high power dissipation is required. MARKING: FULL PART NUMBER TO-202 CASE APPLICATIONS: Designed for general purpose amplifiers and drivers FEATURES: High Collector Current (2.0A) High DC Current Gain (25K MIN) MAXIMUM RATINGS: (TA=25°C) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Power Dissipation Power Dissipation (TC=25°C) Operating and Storage Junction Temperature Thermal Resistance Thermal Resistance SYMBOL VCBO VCEO VCES VEBO IC PD PD TJ, Tstg ΘJA ΘJC 50 40 40 12 2.0 2.0 10 -65 to +150 62.5 12.5 ELECTRICAL CHARACTERISTICS: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS MIN ICBO VCB=30V IEBO VEB=10V BVCBO lC=100μA 50 BVCES lC=100μA 40 BVEBO lE=10μA 12 VCE(SAT) lC=1.0A, IB=2.0mA VCE(SAT) lC=200mA, IB=2.0mA VBE(SAT) lC=1.0A, IB=2.0mA VBE(ON) VCE=5.0V, IC=1.0A hFE VCE=5.0V, IC=200mA 25K hFE VCE=5.0V, IC=500mA 15K hFE VCE=5.0V, lC=1.0A 4.0K fT VCE=5.0V, lC=200mA, f=100MHz 100 Cob VCB=10V, IE=0, f=1.0MHz MAX 100 100 1.5 1.0 2.0 2.0 150K 8.0 UNITS V V V V A W W °C °C/W °C/W UNITS nA nA V V V V V V V MHz pF R2 (23-January 2012) CEN-U45 NPN SILICON DARLINGTON TRANSISTOR TO-202 CASE - MECHANICAL OUTL...




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