SC8276

SC8276Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 4.1 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 12.5 @ VGS=4.5V 13.0 @ VGS=4.0V 24V 8A 13.5 @ VGS=3.8V 18.0 @ VGS=3.1V 23.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. TOP VIEW 1.85 0.03 BOTTOM VIEW 0.65 2.75 0.03 8276 Date Code Mark area 1-pin index mark S1 0.210 0.010 0.107 0.007 S1 S2 G1 G2 S1 S2 0.65 0.65 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 24 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 8 80 PT Total Power Dissipation a 1.3 TJ, TSTG Operating Junction and Storage Temperature Range -55 to 150 Units V V A A W °C FET1 Gate 1 FET2 Gate 2 Gate Protect Diode Source 1 Body Diode Source 2 Details are subject to change without notice. 1 Apr,26,2016 www.samhop.com.tw SC8276 Ver 4.1 ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVSSS Source-Source Breakdown Voltage ISSS Zero Gate Voltage Source Current IGSS Gate-Body Leakage Current VGS=0V , IS=250uA VSS=24V , VGS=0V VGS= ±12V , VSS=0V 24 V 1 uA ±10 uA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RSS(ON) Source-Source On-State Resistance gFS Forward Transconducta...