DMT3020LFDB

DMT3020LFDB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 30V RDS(ON) Max 20mΩ @ VGS = 10V 32mΩ @ VGS = 4.5V ID Max TA = +25°C 7.7A 6.1A Features and Benefits  0.6mm Profile – Ideal for Low Profile Applications  Low Gate Threshold Voltage  Low On-Resistance  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Applications  General Purpose Interfacing Switch  Power Management Functions Mechanical Data  Case: U-DFN2020-6  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish NiPdAu Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4  Terminals Connections: See Diagram Below  Weight: 0.0065 grams (Approximate) U-DFN2020-6 (Type B) S2 G2 D2 D1 D1 D2 G1 S1 Pin 1 Bottom View D1 D2 G1 G2 S1 S2 Internal Schematic Ordering Information (Note 4) Notes: Part Number Case Packaging DMT3020LFDB-7 U-DFN2020-6 (Type B) 3,000/Tape & Reel DMT3020LFDB-13 U-DFN2020-6 (Type B) 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS...