CEP703AL/CEB703AL
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(...
CEP703AL/CEB703AL
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
30V, 40A,RDS(ON) = 17mΩ @VGS = 10V. RDS(ON) = 30mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON).
High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
G S
CEB SERIES TO-263(DD-PAK)
G D S
CEP SERIES TO-220
G
D S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
30
±20
40 120 50 0.4
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 3
62.5
Units V V A A W
W/ C C
Units C/W C/W
Details are subject to change without notice .
1
Rev 2. 2006.Dec http://www.cetsemi.com
CEP703AL/CEB703AL
E...
