CEP7060R/CEB7060R
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Supe...
CEP7060R/CEB7060R
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 75A, RDS(ON) = 13mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. TO-220 & TO-263 package.
D
D
G S
CEB SERIES TO-263(DD-PAK)
G
D S
CEP SERIES
TO-220
G
S
ABSOLUTE MAXIMUM RATINGS Tc = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
VDS VGS ID IDM
PD
60
±20
75 225 150
1
Single Pulsed Avalanche Energy d Single Pulsed Avalanche Current d
EAS 250 IAS 100
Operating and Store Temperature Range
TJ,Tstg
-65 to 175
Units V V A A W
W/ C mJ A C
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Symbol RθJC RθJA
Limit 1
62.5
Units C/W C/W
2004.September
4 - 138
http://www.cetsemi.com
C...