CET3055
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
60V, 4.0A, RDS(ON) = 100mΩ @VGS = 10V. High dense c...
CET3055
N-Channel Enhancement Mode Field Effect
Transistor
FEATURES
60V, 4.0A, RDS(ON) = 100mΩ @VGS = 10V. High dense cell design for extremely low RDS(ON). Rugged and reliable. Lead free product is acquired. SOT-223 package.
D
DS D
G
SOT-223
DS G
SOT-223 (J23Z)
G
S
ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise noted
Parameter
Symbol
Limit
Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed a
VDS 60
VGS ±20
ID 4.0 IDM 25
Maximum Power Dissipation
PD 3
Operating and Store Temperature Range
TJ,Tstg
-55 to 150
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b
Symbol RθJA
Limit 42
Units V V A A W C
Units C/W
1998.March
http://www.cetsemi.com 1
CET3055
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Symbol
Test Condition
Min Typ Max Units
Off Characteristics
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leak...