AON7820

AON7820 20V Dual N-Channel MOSFET General Description Product Summary The AON7820 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RSS(ON). This device is ideal for load switch and battery protection applications. VDS IS (at VGS=4.5V) RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS =3.5V) RSS(ON) (at VGS =2.5V) Typical ESD protection 20V 35A < 16mΩ < 17mΩ < 20mΩ HBM Class 2 DFN 3x3 EP Top View Bottom View Pin 1 Top View S1 G1 S2 G2 D1 D1 D2 G D2 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C IS ISM Continuous Drain Current TA=25°C TA=70°C ISSM TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 35 22 80 11 9 31 12.5 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 3.2 Max 40 75 4 D S Units V V A A W W °C Units °C/W °C/W °C/W Rev 0: August 2011 www.aosmd.com Page 1 of 6 AON7820 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=20V, VGS=0V ...