SavantIC Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD669 2SD669A
DESCRIPTION ·With TO-126 pac...
SavantIC Semiconductor
Silicon
NPN Power
Transistors
Product Specification
2SD669 2SD669A
DESCRIPTION ·With TO-126 package ·Complement to type 2SB649/649A ·High breakdown voltage VCEO:120/160V ·High current 1.5A ·Low saturation voltage,excellent hFE linearity
APPLICATIONS ·For low-frequency power
amplifier applications
PINNING PIN 1 2 3
DESCRIPTION
Emitter Collector;connected to mounting base Base
Absolute maximum ratings(Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VCBO
Collector-base voltage
2SD669 2SD669A
Open emitter
VCEO
Collector-emitter voltage
2SD669 2SD669A
Open base
VEBO
Emitter-base voltage
Open collector
IC Collector current (DC)
ICM Collector current-peak
PD Total power dissipation Tj Junction temperature
Ta=25 TC=25
Tstg Storage temperature
VALUE 180 180 120 160 5 1.5 3 1 20 150
-55~150
UNIT V
V V A A W
SavantIC Semiconductor
Silicon
NPN Power
Transistors
CHARACTERISTICS
Tj=25 unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO
Collector-emitter breakdown voltage
2SD669 2SD669A
IC=10mA; RBE=B
V(BR)CBO
Collector-base breakdown voltage
2SD669 2SD669A
IC=1m A ;IE=0
V(BR)EBO Emitter-base breakdown voltage
IE=1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=0.5A ;IB=50mA
VBE Base-emitter on voltage
IC=150mA ; VCE=5V
ICBO Collector cut-off current
VCB=160V; IE=0
hFE-1
DC current gain
2SD669 2SD669A
IC=150mA ; VCE=5V
hFE-2 fT COB
DC current gain Transition frequency Collector output capacitance
IC=0.5A ; V...