D669

2SD669/2SD669A Elektronische Bauelemente NPN Type Plastic Encapsulate Transistors RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free TO-126C FEATURES Power dissipation PCM : 1mW Tamb=25 Collector current ICM : 1.5 A Collector-base voltage V(BR)CBO : 180 V Collector-emitter voltage VCEO 2SD669 : 120 V 2SD669A : 160 V Operating and storage junction temperature range TJ Tstg: -55 to +150 7.6±0.2 2.7±0.2 1.3±0.2 4.0±0.1 10.8±0.2 O3.1± 0.1 12 3 2.2±0.1 15.5±0.2 1.27±0.1 0.76±0.1 4.58±0.1 2.29 Typ. 0.5± 0.1 1: Emitter 2: Collector 3: Base Dimens ions in Millimeters CHARACTERISTICS Tamb=25 Parameter Symbol unless otherwise specified Test conditions MIN Collector-base breakdown voltage Collector-emitter breakdown voltage Collector-emitter breakdown voltage Collector cut-off current Emitter cut-off current DC current gain V(BR)CBO Ic= 1mA IE=0 V(BR)CEO Ic= 10mA IB=0 V(BR)EBO ICBO IEBO IE= 1mA Ic=0 VCB=160 V , IE=0 VEB= 4V , IC =0 hFE(1) * VCE=5V, IC= 150 mA hFE(2) * VCE=5V, IC= 500mA 2SD669 2SD669A 180 120 160 5 2SD669 2SD669A 60 60 30 Collector-emitter saturation voltage VCE (sat) * IC=500 mA, IB=50mA Base-emitter voltage Transition frequency VBE * fT VCE=5V,IC= 150mA VCE=5V, IC=150mA 140 Collector output capacitance Cob VCB=10 V , IE=0,f=1MHz 14 * The 2SD669 and 2SD669A are grouped by hFE1 as follows. Rank 2SD 669 2SD669A B 60 - 120 60 - 120 C 100 - 200 100 - 200 D 160 - 320 ---- MAX UNIT V V V 10 A 10 A 320 200 1V 1....