MIXA81H1200EH

IGBT Module H Bridge Part name (Marking on product) MIXA81H1200EH MIXA81H1200EH VCES = 1200 V IC25 = 120 A VCE(sat) = 1.8 V 13, 21 1 2 3 4 14, 20 9 10 19 15 11 12 E72873 Features: Easy paralleling due to the positive temperature coefficient of the on-state voltage Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 µsec. - very low gate charge - square RBSOA @ 3x IC - low EMI Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) SONIC™ diode - fast and soft reverse recovery - low operating forward voltage Application: AC motor drives Solar inverter Medical equipment Uninterruptible power supply Air-conditioning systems Welding equipment Switched-mode and resonant-mode power supplies Package: "E3-Pack" standard outline Insulated copper base plate Soldering pins for PCB mounting Optimizes pin layout IXYS reserves the right to change limits, test conditions and dimensions. © 2011 IXYS All rights reserved 20110518a 1-6 MIXA81H1200EH Ouput Inverter T1 - T6 Symbol VCES VGES VGEM IC25 IC80 Definitions collector emitter voltage max. DC gate voltage max. transient collector gate voltage collector current Ptot VCE(sat) total power dissipation collector emitter saturation voltage VGE(th) ICES gate emitter threshold voltage collector emitter leakage current IGES QG(on) td(on) tr td(off) tf Eon Eoff RBSOA gate emitter leakage current total g...