CFH120

GaAs HEMT Preliminary Datasheet Features low noise pseudomorphic HEMT with high associated gain low cost plastic package for low noise front end amplifiers up to 20 GHz For DBS down converters Fully RF tested at 12 GHz 1 = source 2 = drain 3 = source 4 = gate CFH120 ________________________________________________________________________________________________________ ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code (taped) Package CFH120-06 CFH120-08 CFH120-10 H5s H3s H4s Q62705-K0671 Q62705-K0603 Q62705-K0604 MW-4 MW-4 MW-4 Maximum Ratings Characteristics Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Operating temperature Storage temperature range Total power dissipation (TS < 51°C) 1) Symbol VDS VDG VGS ID TCh Top Tstg Ptot Max. Value 3.0 4.0 -2.0 40 150 -30 ... +85 -65 ... +150 180 Unit V V V mA °C °C °C mW Thermal resistance Channel-soldering point source 1) TS: Temperature measured at soldering point Infineon Technologies AG th Rev. 3.0/January 11 , 2002 page 1/20 Wireless Solutions WS TI DS 12 RthChS 690 K/W GaAs HEMT Electrical Characteristics unless otherwise specified: Ta = 25°C; VDD= 2V, fRF = 12.0GHz; ZS= Γopt, ZL = S22*; CFH120 ________________________________________________________________________________________________________ Characteristics Drain-source saturation current VDS = 2 V VGS = 0 V Pinch-off voltage VDS = 2 V ID...