EN27LN1G08

EN27LN1G08 1 Gigabit (128 M x 8), 3.3 V NAND Flash Memory EN27LN1G08 Features Voltage Supply: 2.7V ~ 3.6V Organization - Memory Cell Array : (128M + 4M) x 8bit for 1Gb - Data Register : (2K + 64) x 8bit Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.) - Serial Access : 25ns (Min.) Memory Cell: 1bit/Memory Cell Fast Write Cycle Time - Page Program Time : 200µs (Typ.) - Block Erase Time : 1.5ms (Typ.) Command/Address/Data Multiplexed I/O Port Hardware Data Protection - Program/Erase Lockout During Power Transitions Reliable CMOS Floating-Gate Technology Endurance: - 100K Program/Erase Cycles (with 1 bit/528 bytes ECC) - Data Retention: 10 Years Command Driven Operation Cache Program Operation for High Performance Program Copy-Back Operation OTP Operation Unique ID for Copyright Protection This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications. ©2013 Eon Silicon Solution, Inc., www.eonssi.com Rev. C, Issue Date: 2013/10/03 General Description EN27LN1G08 Offered in 128Mx8 bits, this device is 1Gbit with spare 32Mbit capacity. The device is offered in 3.3V VCC. Its NAND cell provides the most cost effective solution for the solid state mass storage market. A program operation can be performed in typical 200us on the 2,112-byte page and an erase operation can be p...