3.3V NAND Flash Memory
EN27LN4G08 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory
EN27LN4G08
Features
• Voltage Supply: 2.7V ~ 3.6V
• Organizat...
Description
EN27LN4G08 4 Gigabit (512M x 8), 3.3 V NAND Flash Memory
EN27LN4G08
Features
Voltage Supply: 2.7V ~ 3.6V
Organization - Memory Cell Array : (512M + 16M) x 8bit - Data Register : (2K + 64) x 8bit
Automatic Program and Erase - Page Program : (2K + 64) bytes - Block Erase : (128K + 4K) bytes
Page Read Operation - Page Size : (2K + 64) bytes - Random Read : 25µs (Max.) - Serial Access : 25ns (Min.)
Memory Cell: 1bit/Memory Cell
Fast Write Cycle Time - Page Program Time : 250µs (Typ.) - Block Erase Time : 2ms (Typ.)
Command/Address/Data Multiplexed I/O Port
Hardware Data Protection - Program/Erase Lockout During Power Transitions
Reliable CMOS Floating-Gate Technology - ECC Requirement: 4 bit/512 Byte - Endurance: 100K Program/Erase Cycles - Data Retention: 10 Years
Command Register Operation
Automatic Page 0 Read at Power-Up Option - Boot from NAND support - Automatic Memory Download
NOP: 4 cycles
Cache Program Operation for High Performance Program
Cache Read Operation
Copy-Back Operation - EDO mode - OTP Operation - Two-Plane Operation
This Data Sheet may be revised by subsequent versions or modifications due to changes in technical specifications.
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©2013 Eon Silicon Solution, Inc., www.eonssi.com
Rev. A, Issue Date: 2013/10/03
General Description
EN27LN4G08
The device is a 512Mx8bit with spare 16Mx8bit capacity. The device is offered in 3.3V VCC Power Supply. Its NAND cell provides the most cost-effective solution for the solid state ma...
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