SVF20N50F/PN_Datasheet
20A 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF20N50F/PN is an N-channel enhancement mode power...
SVF20N50F/PN_Datasheet
20A 500V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF20N50F/PN is an N-channel enhancement mode power MOS field effect
transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.
FEATURES
∗ 20A, 500V, RDS(on(typ)=0.20Ω@VGS=10V ∗ Low gate charge ∗ Low Crss ∗ Fast switching ∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No. SVF20N50F SVF20N50PN
Package TO-220F-3L
TO-3PN
Marking SVF20N50F
20N50
Material Pb free Pb free
Packing Tube Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.1
2012.04.17 Page 1 of 8
SVF20N50F/PN_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current Drain Current Pulsed
TC=25°C TC=100°C
Power Dissipation(TC=25°C) -Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS VGS
ID
IDM
PD
EAS TJ Tstg
Rating
SVF20N50F
SVF20N50PN
500
±30
20.0
12.6
80.0
72 252
0.58 2.02
1596
-55~+150
-55~+150
Unit
V V
A
A W W/°C mJ °C °C
THERMAL CHARACTERI...