DatasheetsPDF.com

IRFB20N50K Dataheets PDF



Part Number IRFB20N50K
Manufacturers Vishay
Logo Vishay
Description Power MOSFET
Datasheet IRFB20N50K DatasheetIRFB20N50K Datasheet (PDF)

www.vishay.com IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 110 33 54 Single 0.21 FEATURES • Low gate charge Qg results in simple drive requirement Available • Improved gate, avalanche, and dynamic dV/dt Available ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS(on) • Material categorization: for defi.

  IRFB20N50K   IRFB20N50K



Document
www.vishay.com IRFB20N50K, SiHFB20N50K Vishay Siliconix Power MOSFET D TO-220AB S D G G S N-Channel MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration 500 VGS = 10 V 110 33 54 Single 0.21 FEATURES • Low gate charge Qg results in simple drive requirement Available • Improved gate, avalanche, and dynamic dV/dt Available ruggedness • Fully characterized capacitance and avalanche voltage and current • Low RDS(on) • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant. Please see the information / tables in this datasheet for details APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits ORDERING INFORMATION Package Lead (Pb)-free TO-220AB IRFB20N50KPbF SiHFB20N50K-E3 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor VDS VGS VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c TC = 25 °C EAS IAR EAR PD dV/dt Operating junction and storage temperature range Soldering recommendations (peak temperature) d For 10 s TJ, Tstg Mounting torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. Starting TJ = 25 °C, L = 1.6 mH, Rg = 25 , IAS = 20 A c. ISD  20 A, dI/dt  350 A/μs, VDD  VDS, TJ  150 °C d. 1.6 mm from case LIMIT 500 ± 30 20 12 80 2.2 330 20 28 280 10 -55 to +150 300 10 UNIT V A W/°C mJ A mJ W V/ns °C N S22-0560-Rev. F, 04-Jul-2022 1 Document Number: 91101 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFB20N50K, SiHFB20N50K Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain) RthJA RthCS RthJC TYP. - 0.50 - MAX. 58 0.45 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) = 2 5 ÞC, SYMBOL TEST CONDITIONS Static Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage Zero gate voltage drain current Drain-source on-state resistance Forward transconductance Dynamic VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs VGS = 0 V, ID = 250 μA Reference to 25 °C, ID = 1 mA VDS = VGS, ID = 250 μA VGS = ± 30 V VDS = 500 V, VGS = 0 V VDS = 400 V, VGS = 0 V, TJ = 125 °C VGS = 10 V ID = 12 A b VDS = 50 V, ID = 12 A Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss Output capacitance Coss Effective output capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Drain-Source Body Diode Characteristics Coss eff. Qg Qgs Qgd td(on) tr td(off) tf Rg VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 0 V VDS = 1.0 V, f = 1.0 MHz VDS = 400 V, f = 1.0 MHz VDS = 0 V to 400 V VGS = 10 V ID = 20 A, VDS = 400 V see fig. 6 and 13 b VDD = 250 V, ID = 20 A Rg = 7.5 , VGS = 10 V, see fig. 10 b f = 1 MHz, open drain Continuous source-drain diode current Pulsed diode forward current a IS MOSFET symbol showing the  integral reverse ISM p - n junction diode D G S MIN. 500 - 3.0 11 0.3 - - TYP. MAX. UNIT - - V 0.61 - V/°C - 5.0 V - ± 100 nA - 50 μA - 250 0.21 0.25  - - S 2870 - 320 - 34 - pF 3480 - 85 - 160 - - 110 - 33 nC - 54 22 - 74 - ns 45 - 33 - - 2.9  - 20 A - 80 Body diode voltage VSD TJ = 25 °C, IS = 20 A, VGS = 0 V b - - 1.5 V Body diode reverse recovery time Body diode reverse recovery charge trr Qrr - 520 780 ns TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μs b - 5.3 8.0 μC Forward turn-on time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature b. Pulse width  400 μs; duty cycle  2 % S22-0560-Rev. F, 04-Jul-2022 2 Document Number: 91101 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com IRFB20N50K, SiHFB20N50K Vishay Siliconix TYPICAL CH.


SVF20N50PN IRFB20N50K HT6X2X


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)