www.vishay.com
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
Power MOSFET
D TO-220AB
S D G
G
S N-Channel MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg max. (nC) Qgs (nC) Qgd (nC) Configuration
500 VGS = 10 V
110 33 54 Single
0.21
FEATURES
• Low gate charge Qg results in simple drive requirement
Available
• Improved gate, avalanche, and dynamic dV/dt Available ruggedness
• Fully characterized capacitance and avalanche voltage and current
• Low RDS(on)
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
Note
* This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant. For example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details
APPLICATIONS • Switch mode power supply (SMPS) • Uninterruptible power supply • High speed power switching • Hard switched and high frequency circuits
ORDERING INFORMATION
Package
Lead (Pb)-free
TO-220AB IRFB20N50KPbF SiHFB20N50K-E3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-source voltage Gate-source voltage
Continuous drain current
Pulsed drain current a Linear derating factor
VDS
VGS
VGS at 10 V
TC = 25 °C TC = 100 °C
ID
IDM
Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Peak diode recovery dV/dt c
TC = 25 °C
EAS IAR EAR PD dV/dt
Operating junction and storage temperature range Soldering recommendations (peak temperature) d
For 10 s
TJ, Tstg
Mounting torque
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. Starting TJ = 25 °C, L = 1.6 mH, Rg = 25 , IAS = 20 A c. ISD 20 A, dI/dt 350 A/μs, VDD VDS, TJ 150 °C d. 1.6 mm from case
LIMIT 500 ± 30 20 12 80 2.2 330 20 28 280 10
-55 to +150 300 10
UNIT V
A
W/°C mJ A mJ W V/ns °C N
S22-0560-Rev. F, 04-Jul-2022
1
Document Number: 91101
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum junction-to-ambient Case-to-sink, flat, greased surface Maximum junction-to-case (drain)
RthJA RthCS RthJC
TYP. -
0.50 -
MAX. 58 0.45
UNIT °C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
= 2 5 ÞC,
SYMBOL
TEST CONDITIONS
Static
Drain-source breakdown voltage VDS temperature coefficient Gate-source threshold voltage Gate-source leakage
Zero gate voltage drain current
Drain-source on-state resistance Forward transconductance Dynamic
VDS VDS/TJ VGS(th)
IGSS
IDSS
RDS(on) gfs
VGS = 0 V, ID = 250 μA
Reference to 25 °C, ID = 1 mA
VDS = VGS, ID = 250 μA
VGS = ± 30 V
VDS = 500 V, VGS = 0 V
VDS = 400 V, VGS = 0 V, TJ = 125 °C
VGS = 10 V
ID = 12 A b
VDS = 50 V, ID = 12 A
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Output capacitance
Coss
Effective output capacitance Total gate charge Gate-source charge Gate-drain charge Turn-on delay time Rise time Turn-off delay time Fall time Gate input resistance Drain-Source Body Diode Characteristics
Coss eff. Qg Qgs Qgd td(on) tr td(off) tf Rg
VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz VDS = 400 V, f = 1.0 MHz
VDS = 0 V to 400 V
VGS = 10 V
ID = 20 A, VDS = 400 V see fig. 6 and 13 b
VDD = 250 V, ID = 20 A Rg = 7.5 , VGS = 10 V, see fig. 10 b
f = 1 MHz, open drain
Continuous source-drain diode current Pulsed diode forward current a
IS
MOSFET symbol showing the
integral reverse
ISM
p - n junction diode
D
G S
MIN.
500 -
3.0 11
0.3
-
-
TYP. MAX. UNIT
-
-
V
0.61
-
V/°C
-
5.0
V
-
± 100 nA
-
50
μA
-
250
0.21 0.25
-
-
S
2870
-
320
-
34
-
pF
3480
-
85
-
160
-
-
110
-
33
nC
-
54
22
-
74
-
ns
45
-
33
-
-
2.9
-
20
A
-
80
Body diode voltage
VSD
TJ = 25 °C, IS = 20 A, VGS = 0 V b
-
-
1.5
V
Body diode reverse recovery time Body diode reverse recovery charge
trr Qrr
-
520
780
ns
TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μs b
-
5.3
8.0
μC
Forward turn-on time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature b. Pulse width 400 μs; duty cycle 2 %
S22-0560-Rev. F, 04-Jul-2022
2
Document Number: 91101
For technical questions, contact:
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
IRFB20N50K, SiHFB20N50K
Vishay Siliconix
TYPICAL CH.