Power MOSFET
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
60N03
Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low v...
Description
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
60N03
Power MOSFET
60 Amps,30Volts
N-Channel DPAK
Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.
Typical Applications
Power Supplies Converters Power Motor Controls Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain-to-Source Voltage
Gate-to-Source Voltage - Continuous Drain Current - Continuous @ TA = 25°C Drain Current - Single Pulse (tp = 10 ms)
Total Power Dissipation @ TA = 25°C Operating and Storage
Temperature Range
VDSS VGS ID IDM
PD TJ, Tstg
30 ±20 60* 120
75
- 55 to 150
Vdc Vdc Adc
Watts °C
Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25°C (VDD = 28 Vdc, VGS = 10 Vdc, IL = 17 Apk, L = 5.0 mH, RG = 25 W)
Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 1) - Junction-to-Ambient (Note 2)
Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds
EAS
RqJC RqJA RqJA
TL
733 mJ
°C/W 1.65 67 120 260 °C
1. When surface mounted to an FR4 board using 1″ pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2).
*Chip current capability limited by package.
60 AMPERES 30 VOLTS
RDS(on) = 9.0 mW (Typ.)
N-Channel D
G
12 3
4
4 S
1 23
1
60N03
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain-to-S...
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