60N03

N-Channel Enhancement Mode Power MOSFET AF60N03 „ Features - Simple Drive Requirement - Low Gate Charge - Fast Switching - RoHS Compliant - Pb Free Plating Product „ Product Summary BVDSS (V) 30 RDS(ON) (mΩ) 12 ID (A) 45 „ General Description The advanced power MOSFET provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. „ Pin Assignments (Front View) 3S 2D 1G „ Pin Descriptions Pin Name S G D Description Source Gate Drain „ Ordering information A X 60N03 X X Feature PN Package F :MOSFET D: TO-252 „ Block Diagram Packing Blank : Tube or Bulk A : Tape & Reel DS G This datasheet contains new product information. Anachip Corp. reserves the rights to modify the product specification without notice. No liability is assumed as a result of the use of this product. No rights under any patent accompany the sale of the product. Rev. 1.0 Sep 8, 2005 1/5 N-Channel Enhancement Mode Power MOSFET AF60N03 „ Absolute Maximum Ratings Symbol VDS VGS Drain-Source Voltage Gate-Source Voltage Parameter ID Continuous Drain Current, VGS=10V IDM PD TSTG TJ Pulsed Drain Current (Note 1) Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range TC=25ºC TC=100ºC TC=25ºC Rating 30...