Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
S8050LT1 TRANSISTOR (NPN)
FEA...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate
Transistors
S8050LT1
TRANSISTOR (
NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
1. 0
Power dissipation
PCM: 0.3 W (Tamb=25℃)
Collector current
ICM: 0.5 Collector-base voltage
A
V(BR)CBO:
40 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat)
Test conditions
Ic= 100µA, IE=0
Ic=1mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0 VCB=20V, IE=0 VEB= 5V, IC=0 VCE=1V, IC= 50mA VCE=1V, IC= 500mA IC=500 mA, IB= 50mA IC=500 mA, IB= 50mA
MIN 40 25 5
120 50
TYP
Transition frequency
CLASSIFICATION OF hFE(1) Rank Range
fT
L 120-200
VCE=6V, IC= 20mA
f=30MHz
150
H 200-350
MAX UNIT V V V
0.1 µA 0.1 µA 0.1 µA
350
0.6 V 1.2 V
MHz
DEVICE MARKING
S8050LT1=J3Y
Typical Characteristics
S8050 L T 1
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