Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
MMBT3904LT1 TRANSISTOR (NPN)
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Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate
Transistors
MMBT3904LT1
TRANSISTOR (
NPN)
FEATURES
SOT-23
1. BASE 2. EMITTER 3. COLLECTOR
Power dissipation
PCM: 0.2 W (Tamb=25℃)
Collector current
ICM: 0.2 Collector-base voltage
A
V(BR)CBO:
60 V
Operating and storage junction temperature range
TJ, Tstg: -55℃ to +150℃
2. 9
1. 9
0. 95
0. 95
1. 0
2. 4 1. 3
Unit: mm
0. 4
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current
DC current gain
Collector-emitter saturation voltage Base-emitter saturation voltage
Transition frequency
Delay Time Rise Time Storage Time Fall Time
DEVICE MARKING
MMBT3904LT1=1AM
Symbol
Test conditions
MIN MAX UNIT
V(BR)CBO V(BR)CEO V(BR)EBO
ICBO ICEO IEBO HFE(1) HFE(2) VCE(sat) VBE(sat)
fT
td tr ts tf
Ic= 100 µA, IE=0
Ic= 1 mA, IB=0
IE= 100µA, IC=0
VCB= 60V, IE=0 VCE= 40V, IB=0 VEB= 5V, IC=0 VCE=1V, IC= 10mA VCE= 1V, IC= 50mA IC=50mA, IB= 5mA IC= 50mA, IB= 5mA VCE= 20V, IC= 10mA
f=100MHz
VCC=3.0Vdc, VBE=-0.5Vdc IC=10mAdc, IB1=1.0mAdc
VCC=3.0Vdc, IC=10mAdc IB1=IB2=1.0mAdc
60 40 6
100 60
250
0.1 0.1 0.1 300
0.3 0.95
35 35 200 50
V V V
µA µA µA
V V MHz nS nS nS nS
Typical Characterisitics MMBT3904LT1
COLLECTOR CURRENT IC (mA)
COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV)
100 80 60 40 20 0 0
600 300
100
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