RoHS MMBT3906LT1
SOT-23 TRANSISTOR
Dimensions(Unit:mm)
SOT-23
GENERAL PURPOSE TRANSISTOR Complementary Pair with MMB...
RoHS MMBT3906LT1
SOT-23
TRANSISTOR
Dimensions(Unit:mm)
SOT-23
GENERAL PURPOSE
TRANSISTOR Complementary Pair with MMBT3904LT1.
DCollector Dissipation:Pc=225mW
Collector-Emitter Voltage:VCEO=-40V
.,LT
PNP Epitaxial Silicon
Transistor
1.9 2.9 0.2 0.97Ref. 0.124 0.10
0.4
0.5Ref.
2.3 0.2 1.3 0.2
2 3
1
0.38Ref.
0.5Ref. 2A
Marking
MINO.1
OTolerance:0.1mm
0.01-0.10
1.EMITTER 2.BASE 3.COLLECTOR
CAbsolute Maximum Ratings Parameter
Collector-Base Voltage
ICCollector-Emitter Voltage
Emitter-Base Voltage Collector Current
NCollector Dissipation
Junction Temperature
OStorage Temperature
Symbol
VCBO VCEO VEBO Ic Pc Tj Tstg
Rating
-40 -40 -5 -200 225 150 -50~150
(Ta=25 oC)
Unit
V V V mA mW OC
O
C
RElectrical Characteristics TParameter
Collector-Emitter Breakdown Voltage
CCollector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ECollector Cut-off Current
Emitter-Base Cutoff Current
LDC Current Gain EDC Current Gain
DC Current Gain
DC Current Gain
JDC Current Gain
Collector-Emitter Saturation Voltage
ECollector-Emitter Saturation Voltage WBase-Emitter Saturation Voltage
(Ta=25 oC)
Symbol MIN. TYP. MAX. Unit
Condition
BVCEO BVCBO BVEBO ICEO IEBO hFE1 hFE2 hFE3 hFE4 hFE5 VCE(sat) VCE(sat) VBE(sat)
-40 -40 -5
60 80 100 60 30
-50 -50
300
-0.4 -0.25 -0.95
V IC=-1mA IB=0 V IC=-10 A IE=0 V IE=-10 A IC=0 nA VCB=-30V, VEB=-3V nA VCB=-3V, IC=0
VCE=-1V, IC=-0.1mA VCE=-1V, IC=-1mA VCE=-1V, IC=-10mA VCE=-1V, IC=-50mA VCE=-1V, IC=-100mA V IC=-50mA, IB=-5mA V IC=-10mA, IB=-1mA V...