MMBT5551LT1

RoHS MMBT5551LT1 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o) .,LTDCollector-Emiller Voltage:VCEO=160V SOT-23 1 1. 2.4 1.3 3 2 1.BASE 2.EMITTER 3.COLLECTOR 2.9 1.9 0.95 0.95 0.4 O Unit:mm CABSOLUTE MAXIMUM RATINGS ICCharacteristic Collector-Base Voltage Collector-Emitter Voltage NEmitter-Base Voltage Collector Current OCollector Dissipation Ta=25oC* Junction Temperature RStorage Temperature Symbol VCBO VCEO VEBO Ic PD Tj Tstg Rating 180 160 6 600 225 150 -55~150 (Ta=25 oC) Unit V V V mA mW O C OC TElectrical Characteristics (Ta=25 oC) Parameter Symbol MIN. TYP. MAX. Unit Condition CCollector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage# EEmitter-Base Breakdown Voltage LCollector-Base Cutoff Current Emitter-Base Cutoff Current EDC Current Gain DC Current Gain DC Current Gain JCollector-Emitter Saturation Voltage Collector-Emitter Saturation Voltage EBase-Emitter Saturation Voltage WBase-Emitter Saturation Voltage BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 hFE3 VCE(sat) VCE(sat) VBE(sat) VBE(sat) 180 160 6 80 80 30 50 50 250 0.5 0.15 1 1 V IC=100 A IE=0 V IC=1mA IB=0 V IE=10 A IC=0 nA VCB=120V, VC=0 nA VCB=4V, IC=0 VCE=5V, IC=1mA VCE=5V, IC=-10mA VCE=5V, IC=50mA V IC=50mA, IB=5mA V IC=10mA, IB=1mA V IC=50mA, IB=1mA V IC=10mA, IB=1mA Current Gain-Bandwidth Product fT 100 300 MHz VCE=10V, IC=10mA,f=100MHz *Total Device Dissipation:FR=1X0.75X0.062 in Board Derate 25oC # Pulse Test: Pulse Width 300uS ...