MMBT5401LT1

TIGER ELECTRONIC CO.,LTD MMBT5401LT1 PNP EPITAXIAL PLANAR TRANSISTOR Description The MMBT5401LT1 is designed for general purpose applications requiring high breakdown voltages. Features High Collector-Emitter Breakdown Voltage. BVCEO=150V(@ IC=1mA) Complements to NPN Type MMBT5551LT1. Absolute Maximum Ratings Maximum Temperatures Storage Temperature .............................................................................................. -55~+150 °C Junction Temperature ..................................................................................... +150°C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ............................................................................... 250 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ....................................................................................... 160 V VCEO Collector to Emitter Voltage .................................................................................... 150 V VEBO Emitter to Base Voltage .............................................................................................. 5 V IC Collector Current ......................................................................................................... 500mA Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO VCE(sat)1 VCE(sat)2 VBE(sat)1 VBE(sat)2 hFE1 hFE2 hFE3 fT Cob Min. 160 150 5 50 60 50 100 - Typ. - Max. 50 200 500 1 1 240 300 6 Unit V V V nA mV...