MMBT5401LT1

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors MMBT5401LT1 TRANSISTOR (PNP) FEATURES Power dissipation PCM: 0.3 W (Tamb=25℃) Collector current ICM: -0.6 Collector-base voltage A V(BR)CBO: -160 V Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 2. 9 1. 9 0. 95 0. 95 1. 0 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR - 2. 4 1. 3 Unit: mm 0. 4 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage voltage Base-emitter Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO HFE(1) HFE(2) HFE(3) VCE(sat) saturation VBE(sat) fT Test conditions Ic= -100 µA, IE=0 Ic= -1 mA, IB=0 IE= -10µA, IC=0 VCB=-120V, IE=0 VEB=-4V, IC=0 VCE= -5V, IC= -1mA VCE= -5V, IC=-10mA VCE= -5V, IC=-50mA IC=-50mA, IB= -5mA IC= -50mA, IB= -5mA VCE= -5V, IC= -10mA f=30MHz MIN -160 -150 -5 80 100 50 MAX UNIT V V V -0.1 µA -0.1 µA 200 -0.5 V -1 V 100 MHz DEVICE MARKING MMBT5401LT1=2L 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd MMBT5401LT1 Typical Characteristics hFE - TYPICAL PULSED CURRENT GAIN BESATV - BASE-EMITTER VOLTAGE (V) 200 VCE = 5V 150 125 oC 100 25 oC 50 - 40 oC 0 1E-4 1E-3 0.01 0.1 IC - COLLECTOR CURRENT (A) Figure 1. Typical Pulsed Current Gain vs Collector Cur...