2SA1015

DC COMPONENTS CO., LTD. R DISCRETE SEMICONDUCTORS 2SA1015 TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in driver stage of AF amplifier general purpose amplification. Pinning 1 = Emitter 2 = Collector 3 = Base Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC PD TJ TSTG Rating -50 -50 -5 -150 400 +150 -55 to +150 Unit V V V mA mW oC oC TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) .500 (12.70) Min 2o Typ 2o Typ .050 (1.27)Typ .022(0.56) .014(0.36) .100 (2.54) Typ .022(0.56) .014(0.36) 321 .148(3.76) .132(3.36) .050 5oTyp. 5oTyp. (1.27)Typ Dimensions in inches and (millimeters) Electrical Characteristics (Ratings at 25oC ambient temperature unless otherwise specified) Characteristic Symbol Min Typ Collector-Base Breakdown Volatge BVCBO -50 Collector-Emitter Breakdown Voltage BVCEO -50 Emitter-Base Breakdown Volatge BVEBO -5 Collector Cutoff Current ICBO - Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) IEBO VCE(sat) VBE(sat) - DC Current Gain(1) hFE1 hFE2 70 25 Transition Frequency fT 80 Output Capacitance Cob - (1)Pulse Test: Pulse Width 380µs, Duty Cycle 2% - Max - -0.1 -0.1 -0.3 -1.1 700 7 Unit V V V µA µA V V - MHz pF Test Conditions IC=-100µA, IE=0 IC=-1...