2SA1015

TIGER ELECTRONIC CO.,LTD 2SA1015 PNP EPITAXIAL PLANAR TRANSISTOR Description The 2SA1015 is designed for use in driver stage of AF amplifier and general purpose amplification. Absolute Maximum Ratings Maximum Temperatures Storage Temperature ............................................................................................... -55~+150°C Junction Temperature ..................................................................................... +150°C Maximum Maximum Power Dissipation Total Power Dissipation (Ta=25°C) ................................................................................ 400 mW Maximum Voltages and Currents (Ta=25°C) VCBO Collector to Base Voltage ........................................................................................ 50 V VCEO Collector to Emitter Voltage ..................................................................................... 50 V VEBO Emitter to Base Voltage ............................................................................................. 5 V IC Collector Current ...................................................................................................... 150 mA Characteristics (Ta=25°C) Symbol Min. Typ. BVCBO 50 BVCEO 50 BVEBO 5 ICBO IEBO VCE(sat) VBE(sat) hFE1 120 hFE2 25 fT 80 Cob Max. 100 100 300 1.1 700 7.0 Unit V V V nA nA mV V MHz pF Test Conditions IC=100uA, IE=0 IC=1mA, IB=0 IE=10uA, IC=0 VCB=50V, IE=0 VEB=5V, IC=0 IC=100mA, IB=10mA IC=100mA, IB=10mA...