isc Silicon NPN Transistor
DESCRIPTION ·High Voltage ·Excellent hFE linearity ·Minimum Lot-to-Lot variations for robust...
isc Silicon
NPN Transistor
DESCRIPTION ·High Voltage ·Excellent hFE linearity ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Dsigned for use in driver stage of AF amplifier and low speed switching
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO Collector-Base Voltage
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
2SC945
VALUE
UNIT
60
V
50
V
5
V
100
mA
20
mA
250
mW
125
℃
-55~125
℃
isc website：www.iscsemi.cn
1 isc & iscsemi is registered trademark
isc Silicon
NPN Transistor
2SC945
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCE(sat) Collector-Emitter Saturation Voltage IC= 100mA ; IB= 10mA
MIN
TYP.
MA X
UNI T
0.15 0.3 V
VBE(sat) Base-Emitter Saturation Voltage
IC= 100mA ; IB= 10 mA
0.86 1.0 V
VBE
Base -Emitter Voltage
IC= 1.0mA ; VCE= 6V
0.55
0.65 V
ICBO
Collector Cutoff Current
VCB= 60V; IE= 0
0.1 μA
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1 μA
hFE1
DC Current Gain
IC= 0.1mA ; VCE= 6V
50 185
hFE2
DC Current Gain
IC= 1.0mA ; VCE= 6V
fT
Current-Gain—Bandwidth Product
IC= 10mA; VCE= 6V;
Cob
Collector-Base Capacitance
VCB=6V; IE=0; f=1.0MHz
90 200 600
150
250
450
MH z
3
4 pF
NF
Noise Figure
IC= 0.1mA ; VCE= 6V,f=1kHz;RG=2kΩ
...
