Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors
KTC3265 TRANSISTOR (NPN)
SOT...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate
Transistors
KTC3265
TRANSISTOR (
NPN)
SOT-23
FEATURES
z High DC current gain z Complementary to KTA1298
1. BASE 2. EMITTER 3. COLLECTOR
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Symbol VCBO VCEO VEBO IC PC Tj Tstg
Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature
Value 35 30 5 800 200 150
-55-150
Units V V V mA
mW
℃ ℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current DC current gain Collector-emitter saturation voltage base-emitter voltage
Transition frequency
Collector output capacitance
CLASSIFICATION OF hFE Rank Range Marking
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) V BE
fT
Cob
Test conditions
IC= 100μA, IE=0
IC= 10mA, IB=0
IE=100μA, IC=0
VCB=30 V, IE=0 VEB=5 V, IC=0 VCE=1V, IC= 100mA IC=500mA, IB=20mA VCE=1V,IC=10mA VCE=5V, IC=10mA
f=100MHz
VCB=10V,IE=0,f=1MHZ
O 100-200
EO
MIN TYP 35 30 5
100
0.5 120 13
Y 160-320
EY
MAX
0.1 0.1 320 0.5 0.8
UNIT V V V
μA μA
V V MHz pF
Typical Characteristics
KTC3265
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