Darlington
2SB1382
(2 k Ω) (80Ω) E
B Equivalent circuit C
Silicon PNP Epitaxial Planar Transistor (Complement to type...
Darlington
2SB1382
(2 k Ω) (80Ω) E
B Equivalent circuit C
Silicon
PNP Epitaxial Planar
Transistor (Complement to type 2SD2082) Application : Chopper
Regulator, DC Motor Driver and General Purpose
sAbsolute maximum ratings (Ta=25°C)
Symbol
2SB1382
Unit
VCBO VCEO VEBO IC IB PC Tj Tstg
–120 –120
–6 –16(Pulse–26)
–1 75(Tc=25°C)
150 –55 to +150
V V V A A W °C °C
sElectrical Characteristics
Symbol
Conditions
ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB
VCB=–120V VEB=–6V IC=–10mA
VCE=–4V, IC=–8A IC=–8A, IB=–16mA IC=–8A, IB=–16mA VCE=–12V, IE=1A VCB=–10V, f=1MHz
(Ta=25°C)
2SB1382 Unit
–10max –10max
µA mA
–120min
V
2000min
–1.5max
V
–2.5max
V
50typ
MHz
350typ
pF
sTypical Switching Characteristics (Common Emitter)
VCC
RL
IC
VBB1
VBB2
IB1
(V) (Ω) (A) (V) (V) (mA)
–40 5 –8 –10 5 –16
IB2 (mA)
16
ton (µs)
0.8typ
tstg (µs)
1.8typ
tf (µs)
1.0typ
External Dimensions FM100(TO3PF)
0.8±0.2
15.6±0.2
5.5±0.2 3.45 ±0.2
5.5
23.0±0.3 9.5±0.2
16.2
ø3.3±0.2 a b
3.0
1.6 3.3
5.45±0.1
1.75
2.15
1.05
+0.2 -0.1
5.45±0.1
0.65
+0.2 -0.1
0.8 3.35
1.5 4.4 1.5 BC E
Weight : Approx 6.5g a. Type No. b. Lot No.
DC Current Gain hFE
Collector Current IC(A) –40mA
I C– V CE Characteristics (Typical)
–26
–20mA
–12mA
–20 –6mA
–3mA –10 IB=–1.5mA
0 0 –1 –2 –3 –4 –5 –6 Collector-Emitter Voltage VCE(V)
Collector-Emitter Saturation Voltage VCE(sat)(V)
V CE( s a t ) – I B Characteristics (Typical)
–3
I C– V BE Temperature Characteristics (Typical)
(...
