N-Channel MOSFET
Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH 30N45 450 V IXTH 30N50 500 V
ID25
RDS(on)
3...
Description
Preliminary Data Sheet
MegaMOSTMFET
N-Channel Enhancement Mode
VDSS
IXTH 30N45 450 V IXTH 30N50 500 V
ID25
RDS(on)
30 A 0.16 Ω 30 A 0.17 Ω
TO-247 AD
Symbol
VDSS VDGR VGS VGSM ID25 IDM PD TJ TJM T
stg
TL Md Weight
Symbol
VDSS
VGS(th)
IGSS IDSS
R DS(on)
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous Transient
30N45 30N50 30N45 30N50
450 500 450 500
±20 ±30
TC = 25°C TC = 25°C, pulse width limited by TJM
TC = 25°C
30 120
360
-55 ... +150 150
-55 ... +150
V V V V
V V
A A
W
°C °C °C
1.6 mm (0.063 in) from case for 10 s Mounting torque
300 °C 1.13/10 Nm/lb.in.
6g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified) min. typ. max.
VGS = 0 V, ID = 5 mA
30N50 30N45
BV temperature coefficient DSS
VDS = VGS, ID = 250µA V temperature coefficient
GS(th)
VGS = ±20 VDC, VDS = 0
VDS = 0.8 VDSS V =0V
GS
TJ = 25°C
T J
=
125°C
V = 10 V, I = 0.5 I GS D D25
30N50 30N45
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
500 450
.087
2 -0.25
V V %/k
4V %/k
±100 nA
200 µA 3 mA
0.17 0.16
Ω Ω
TO-247 SMD ( ...S )
D (TAB)
G E
C (TAB)
G = Gate,
D = Drain,
S = Source, TAB = Drain
*Add suffix letter "S" for TO-247 SMD package option (EX:IXTH30N50S)
Features
International standard package
JEDEC TO-247 AD
Low
R DS (on)
HDMOSTM
process
Rugged polysilicon gate cell structure
High commutating dv/dt rating
Fast switching times
Applications
Switch-mode and resonant-mode
power suppl...
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