Document
IGP10N60T
TRENCHSTOP™ Series
q
Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology
Features:
Very low VCE(sat) 1.5V (typ.) Maximum Junction Temperature 175°C Short circuit withstand time 5s Designed for :
- Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour
NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)
Low EMI Low Gate Charge Qualified according to JEDEC1 for target applications Pb-free lead plating; RoHS compliant Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C G
E
PG-TO-220-3
Type IGP10N60T
VCE 600V
IC 10A
VCE(sat),Tj=25°C Tj,max Marking Code
Package
1.5V
175C G10T60 PG-TO-220-3
Maximum Ratings
Parameter
Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 400V, Tj 150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol VCE
IC
ICpuls VGE
tSC Ptot Tj Tstg
Value 600
24 18 30 30 20
5
110 -40...+175 -55...+150
260
Unit V
A
V s W C
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev. 2.5 30.04.2015
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient
IGP10N60T
TRENCHSTOP™ Series
q
Symbol RthJC RthJA
Conditions
Max. Value 1.35 62
Unit K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage
Gate-emitter threshold voltage Zero gate voltage collector current
Gate-emitter leakage current Transconductance Integrated gate resistor
V(BR)CES VCE(sat)
VGE(th) ICES
VGE=0V, IC=0.2mA VGE = 15V, IC=10A Tj=25C Tj=175C IC=0.3mA,VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C
IGES gfs RGint
VCE=0V,VGE=20V VCE=20V, IC=10A
min.
600
4.1
-
Value typ.
-
1.5 1.8 4.6
6 none
Unit max.
-V
2.05 -
5.7 µA
40 1000 100
-
nA S Ω
Dynamic Characteristic
Input capacitance Output capacitance Reverse transfer capacitance
Ciss Coss Crss
VCE=25V, VGE=0V, f=1MHz
- 551 - pF - 40 - 17 -
Gate charge
QGate
VCC=480V, IC=10A
-
62
- nC
VGE=15V
Internal emitter inductance
LE TO-220-3-1
- 7 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC5s
-
100
-A
VCC = 400V,
Tj = 25C
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.5 30.04.2015
IGP10N60T
TRENCHSTOP™ Series
q
Switching Characteristic 3), Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
td(on) tr td(off) tf Eon Eoff Ets
Tj=25C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L=60nH,C=40pF
L, C from Fig. E Energy losses include “tail” and diode reverse recovery.
Diode from IKP10N60T
min.
-
Value typ.
12 8 215 38 0.16 0.27 0.43
Unit max.
- ns - mJ -
Switching Characteristic 3), Inductive Load, at Tj=175 C
Parameter
Symbol
Conditions
IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy
td(on) tr td(off) tf Eon Eoff Ets
Tj=175C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L=60nH,C=40pF
L, C from Fig. E Energy losses include “tail” and diode reverse recovery.
Diode from IKP10N60T
min.
-
Value typ.
10 11 233 63 0.26 0.35 0.61
Unit max.
- ns - mJ -
IFAG IPC TD VLS
3
Rev. 2.5 30.04.2015
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT
IGP10N60T
TRENCHSTOP™ Series
q
30A
25A 20A
TC=80°C
15A 10A
TC=110°C
Ic
5A
0A 10Hz
Ic
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of switching frequency (Tj 175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 23)
tp=1µs
5µs 10A
20µs
100µs 1A
500µs
10ms
0,1A 1V
DC
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V)
120W
100W
80W
60W
40W
20W
0W 25°C 50°C 75°C 100°C 125°C 150°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of case temperature (Tj 175C)
20A
15A
10A
5A
0A 25°C
50°C
75°C 100°C 125°C 150°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of case temperature (VGE 15V, Tj 175C)
Ptot, POWER DISSIPATION IC, COLLECTOR CURRENT
IFAG IPC TD VLS
4
Rev. 2.5 30.04.2015
IC, COLLECT.