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G10T60 Dataheets PDF



Part Number G10T60
Manufacturers Infineon
Logo Infineon
Description IGBT
Datasheet G10T60 DatasheetG10T60 Datasheet (PDF)

IGP10N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour  NPT.

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IGP10N60T TRENCHSTOP™ Series q Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology Features:  Very low VCE(sat) 1.5V (typ.)  Maximum Junction Temperature 175°C  Short circuit withstand time 5s  Designed for : - Variable Speed Drive for washing machines and air conditioners - induction cooking - Uninterrupted Power Supply  TRENCHSTOP™ and Fieldstop technology for 600V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behaviour  NPT technology offers easy parallel switching capability due to positive temperature coefficient in VCE(sat)  Low EMI  Low Gate Charge  Qualified according to JEDEC1 for target applications  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ C G E PG-TO-220-3 Type IGP10N60T VCE 600V IC 10A VCE(sat),Tj=25°C Tj,max Marking Code Package 1.5V 175C G10T60 PG-TO-220-3 Maximum Ratings Parameter Collector-emitter voltage, Tj ≥ 25C DC collector current, limited by Tjmax TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area, VCE = 600V, Tj = 175C, tp = 1µs Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC  400V, Tj  150C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.6mm (0.063 in.) from case for 10s Symbol VCE IC ICpuls VGE tSC Ptot Tj Tstg Value 600 24 18 30 30 20 5 110 -40...+175 -55...+150 260 Unit V A V s W C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 1 Rev. 2.5 30.04.2015 Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction – case Thermal resistance, junction – ambient IGP10N60T TRENCHSTOP™ Series q Symbol RthJC RthJA Conditions Max. Value 1.35 62 Unit K/W Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage Gate-emitter threshold voltage Zero gate voltage collector current Gate-emitter leakage current Transconductance Integrated gate resistor V(BR)CES VCE(sat) VGE(th) ICES VGE=0V, IC=0.2mA VGE = 15V, IC=10A Tj=25C Tj=175C IC=0.3mA,VCE=VGE VCE=600V, VGE=0V Tj=25C Tj=175C IGES gfs RGint VCE=0V,VGE=20V VCE=20V, IC=10A min. 600 4.1 - Value typ. - 1.5 1.8 4.6 6 none Unit max. -V 2.05 - 5.7 µA 40 1000 100 - nA S Ω Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Ciss Coss Crss VCE=25V, VGE=0V, f=1MHz - 551 - pF - 40 - 17 - Gate charge QGate VCC=480V, IC=10A - 62 - nC VGE=15V Internal emitter inductance LE TO-220-3-1 - 7 - nH measured 5mm (0.197 in.) from case Short circuit collector current1) IC(SC) VGE=15V,tSC5s - 100 -A VCC = 400V, Tj = 25C 1) Allowed number of short circuits: <1000; time between short circuits: >1s. IFAG IPC TD VLS 2 Rev. 2.5 30.04.2015 IGP10N60T TRENCHSTOP™ Series q Switching Characteristic 3), Inductive Load, at Tj=25 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets Tj=25C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L=60nH,C=40pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKP10N60T min. - Value typ. 12 8 215 38 0.16 0.27 0.43 Unit max. - ns - mJ - Switching Characteristic 3), Inductive Load, at Tj=175 C Parameter Symbol Conditions IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy td(on) tr td(off) tf Eon Eoff Ets Tj=175C, VCC=400V,IC=10A, VGE=0/15V,rG=23, L=60nH,C=40pF L, C from Fig. E Energy losses include “tail” and diode reverse recovery. Diode from IKP10N60T min. - Value typ. 10 11 233 63 0.26 0.35 0.61 Unit max. - ns - mJ - IFAG IPC TD VLS 3 Rev. 2.5 30.04.2015 IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT IGP10N60T TRENCHSTOP™ Series q 30A 25A 20A TC=80°C 15A 10A TC=110°C Ic 5A 0A 10Hz Ic 100Hz 1kHz 10kHz 100kHz f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj  175C, D = 0.5, VCE = 400V, VGE = 0/15V, rG = 23) tp=1µs 5µs 10A 20µs 100µs 1A 500µs 10ms 0,1A 1V DC 10V 100V 1000V VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 175C; VGE=0/15V) 120W 100W 80W 60W 40W 20W 0W 25°C 50°C 75°C 100°C 125°C 150°C Figure 3. TC, CASE TEMPERATURE Power dissipation as a function of case temperature (Tj  175C) 20A 15A 10A 5A 0A 25°C 50°C 75°C 100°C 125°C 150°C Figure 4. TC, CASE TEMPERATURE Collector current as a function of case temperature (VGE  15V, Tj  175C) Ptot, POWER DISSIPATION IC, COLLECTOR CURRENT IFAG IPC TD VLS 4 Rev. 2.5 30.04.2015 IC, COLLECT.


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