CFY25

GaAs FET q q q q q CFY 25 Low noise High gain For front-end amplifiers lon-implanted planar structure All gold metallization ESD: Electrostatic discharge sensitive device, observe handling precautions! Type CFY 25-17 CFY 25-20 CFY 25-23 Marking C5 C6 C7 Ordering Code (tape and reel) Q62703-F106 Q62703-F107 Q62703-F108 Pin Configuration 1 2 3 4 D S G S Package1) Micro-X Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Total power dissipation, TS ≤ 56 ˚C2) Channel temperature Storage temperature range Thermal Resistance Channel - soldering point2) Rth chS 375 K/W Symbol VDS VDG VGS ID Ptot Tch Tstg Values 5 7 –5…+0 80 250 150 – 65 … + 150 mA mW ˚C Unit V 1) 2) For detailed information see chapter Package Outlines. TS is measured on the source lead at the soldering point to the pcb. Semiconductor Group 1 07.94 CFY 25 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Drain-source saturation current VDS = 3 V, VGS = 0 Pinch-off voltage ID = 1 mA, VDS = 3 V Gate leakage current ID = 15 mA, VDS = 3 V Transconductance ID = 15 mA, VDS = 3 V Noise figure IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Associated gain IDS = 15 mA, VDS = 3 V, f = 12 GHz CFY 25-17 CFY 25-20 CFY 25-23 Symbol min. IDSS Vp IG gm F – – – Ga 9 8.5 8.5 9.5 9 9 – – – 1.6 1.9 2.2 1.7 2.0 2.3 15 – 0.3 – 30 Values typ. 30 – 1.0 0.1 40 max. 60 – 3.0 2 – mA V µA Unit mS dB Semiconductor Group 2 CFY 25 To...