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CFY27

Infineon Technologies AG

HiRel Ku-Band GaAs General Purpose MESFET

CFY27 HiRel Ku-Band GaAs General Purpose MESFET • • • • • • • HiRel Discrete and Microwave Semiconductor For professiona...


Infineon Technologies AG

CFY27

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Description
CFY27 HiRel Ku-Band GaAs General Purpose MESFET HiRel Discrete and Microwave Semiconductor For professional pre- and driver-amplifiers For frequencies from 500 MHz to 20 GHz Hermetically sealed microwave package High gain, medium power Component Under Development Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008, Type Variant No.s 06 and 07 foreseen (tbc.) 4 3 1 2 ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code Pin Configuration 1 2 S 3 D 4 S Package CFY27-38 (ql) CFY27-P (ql) - see below G Micro-X CFY27-nnl: specifies gain and output power levels (see electrical characteristics) (ql) Quality Level: P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality, Ordering Code: Ordering Code: Ordering Code: Ordering Code: Q62703F121 on request on request on request (see order instructions for ordering example) Semiconductor Group 1 of 9 Draft D, September 99 CFY27 Maximum Ratings Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.: Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol Values 9 11 - 6... + 0.5 420 5 + 20 (tbc.) 175 - 65... + 175 900 230 Unit V V V mA mA dBm °C °C mW °C Rth JS...




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