CFY27 HiRel Ku-Band GaAs General Purpose MESFET • • • • • • •
HiRel Discrete and Microwave Semiconductor For professional pre- and driver-amplifiers For frequencies from 500 MHz to 20 GHz Hermetically sealed microwave package High gain, medium power Component Under Development Space Qualification Expected 1998 ESA/SCC Detail Spec. No.: 5613/008, Type Variant No.s 06 and 07 foreseen (tbc.)
4
3
1
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration 1 2 S 3 D 4 S
Package
CFY27-38 (ql) CFY27-P (ql)
-
see below
G
Micro-X
CFY27-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q62703F121 on request on request on request
(see order instructions for ordering example)
Semiconductor Group
1 of 9
Draft D, September 99
CFY27
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation 2) Soldering temperature 3) Thermal Resistance Junction-soldering point Notes.:
Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol
Values 9 11 - 6... + 0.5 420 5 + 20 (tbc.) 175 - 65... + 175 900 230
Unit V V V mA mA dBm °C °C mW °C
Rth JS
≤ 150 (tbc.)
K/W
1) For VDS ≤ 5 V. For VDS > 5 V, derating is required. 2) At TS = + 40 °C. For TS > + 40 °C derating is required. 3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have elapsed.
Semiconductor Group
2 of 9
Draft D, September 99
CFY27
Electrical Characteristics (at TA=25°C; unless otherwise specified)
Parameter
Symbol min.
Values typ. max.
Unit
DC Characteristics Drain-source saturation current VDS = 2 V, VGS = 0 V Gate threshold voltage VDS = 3 V, ID = 1 mA Drain current at pinch-off VDS = 3 V, VGS = - 4 V Gate leakage current at pinch-off VDS = 3 V, VGS = - 4 V Transconductance VDS = 3 V, ID = 120 mA Gate leakage current at operation VDS = 3 V, ID = 120 mA Thermal resistance junction to soldering point IDss -VGth IDp 150 1.0 270 2.0 < 12 420 3.2 60 mA V µA
-IGp
-
< 12
30
µA
gm120
130
160
-
mS
-IG120
-
<3
-
µA
Rth JS
-
125
-
K/W
Semiconductor Group
3 of 9
Draft D, September 99
CFY27
Electrical Characteristics (continued)
Parameter
Symbol min.
Values typ. max.
Unit
AC Characteristics Noise figure 1) VDS = 3 V, ID = 120 mA, f = 12 GHz CFY27-P CFY27-38 Associated gain. 1) VDS = 3 V, ID = 120 mA, f = 12 GHz CFY27-P CFY27-38 Output power at 1 dB gain compression 2) P1dB VDS = 5 V, ID(RF off) = 120 mA, f = 2.3 GHz CFY27-P CFY27-38 Linear power gain 2) VDS = 5 V, ID = 120 mA, f = 2.3 GHz, Pin = 0 dBm CFY27-P CFY27-38 Notes.: 1) Noise figure / sssociated gain characteristics given for minimum noise figure matching conditions (fixed generic matching, no fine-tuning). 2) Output power / linear power gain characteristics given for optimum output power matching conditions (fixed generic matching, no fine-tuning). Glp 24.5 26 > 25 dB Ga 7.5 > 7.8 8.0 dBm NF < 3.6 3.5 3.8 dB dB
17.5 -
19 > 18
-
Semiconductor Group
4 of 9
Draft D, September 99
CFY27
Typical Common Source S-Parameters CFY27
V DS = 3 V, I D = 120 mA, Z o = 50 Ω f [GHz] 0,5 0,6 0,7 0,8 0,9 1,0 1,1 1,2 1,3 1,4 1,5 1,6 1,7 1,8 1,9 2,0 2,1 2,2 2,3 2,4 2,5 2,6 2,7 2,8 2,9 3,0 3,1 3,2 3,3 3,4 3,5 4,0 4,5 5,0 5,5 6,0 6,5 7,0 7,5 8,0 8,5 9,0 9,5 10,0 10,5 11,0 11,5 12,0 12,5 13,0 13,5 14,0 14,5 15,0 15,5 16,0 16,5 17,0 17,5 18,0 |S11| [magn] 0,936 0,921 0,904 0,890 0,876 0,864 0,854 0,846 0,837 0,830 0,823 0,816 0,810 0,804 0,799 0,795 0,791 0,788 0,784 0,781 0,779 0,776 0,773 0,771 0,769 0,767 0,765 0,764 0,763 0,762 0,761 0,758 0,757 0,759 0,761 0,763 0,764 0,766 0,768 0,771 0,775 0,780 0,787 0,794 0,802 0,810 0,816 0,823 0,829 0,835 0,841 0,846 0,851 0,857 0,863 0,869 0,874 0,881 0,887 0,895