GaAs FET (Low noise High gain For low-noise front end amplifiers For DBS down converters)
GaAs FET
CFY 35
______________________________________________________________________________________________________...
Description
GaAs FET
CFY 35
________________________________________________________________________________________________________
Datasheet
* Low noise * High gain * For low-noise front end amplifiers * For DBS down converters
ESD:
Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering code (tape and reel)
Pin Configuration 1 2 3 4
Package 1)
CFY 35-20 CFY 35-23
NA NB
Q62702-F1393 Q62702-F1394
S
D
S
G
MW-4
Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 53°C) 2) Thermal resistance Channel-soldering point 2)
Symbol
Value 5 6 -4 ... 0 60 150 -40...+150 180
Unit V V V mA °C °C mW
VDS VDG VGS ID TCh Tstg Ptot
RthChS
540
K/W
1) Dimensions see chapter Package Outlines 2) TS is measured on the source 1 lead at the soldering point to the PCB.
Siemens Aktiengesellschaft
pg. 1/4
13.02.1996 HL EH PD 21
GaAs FET
Electrical characteristics at TA = 25°C, unless otherwise specified
CFY 35
________________________________________________________________________________________________________
Characteristics Drain-source saturation current
V = 2.5 V,
DS
Symbol
min
typ
max
Unit mA
V =0V
GS
IDSS VGS(P) gm IG F
10 -0.2
25
45 V
Pinch-off voltage
V = 2.5 V
DS
I = 1 mA
D
-1.2
-2.5 mS
Transconductance
V = 2.5 V
DS
I = 10 mA
D
20
30
µA
Gate leakage current
V = 2.5 V
DS
I = 10 mA
D
-
0.1
2 dB
Nois...
Similar Datasheet