CFY35-23

GaAs FET CFY 35 ________________________________________________________________________________________________________ Datasheet * Low noise * High gain * For low-noise front end amplifiers * For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code (tape and reel) Pin Configuration 1 2 3 4 Package 1) CFY 35-20 CFY 35-23 NA NB Q62702-F1393 Q62702-F1394 S D S G MW-4 Maximum ratings Drain-source voltage Drain-gate voltage Gate-source voltage Drain current Channel temperature Storage temperature range Total power dissipation (TS < 53°C) 2) Thermal resistance Channel-soldering point 2) Symbol Value 5 6 -4 ... 0 60 150 -40...+150 180 Unit V V V mA °C °C mW VDS VDG VGS ID TCh Tstg Ptot RthChS 540 K/W 1) Dimensions see chapter Package Outlines 2) TS is measured on the source 1 lead at the soldering point to the PCB. Siemens Aktiengesellschaft pg. 1/4 13.02.1996 HL EH PD 21 GaAs FET Electrical characteristics at TA = 25°C, unless otherwise specified CFY 35 ________________________________________________________________________________________________________ Characteristics Drain-source saturation current V = 2.5 V, DS Symbol min typ max Unit mA V =0V GS IDSS VGS(P) gm IG F 10 -0.2 25 45 V Pinch-off voltage V = 2.5 V DS I = 1 mA D -1.2 -2.5 mS Transconductance V = 2.5 V DS I = 10 mA D 20 30 µA Gate leakage current V = 2.5 V DS I = 10 mA D - 0.1 2 dB Nois...