HiRel K-Band GaAs Super Low Noise HEMT
CFY66 HiRel K-Band GaAs Super Low Noise HEMT • •
HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEM...
Description
CFY66 HiRel K-Band GaAs Super Low Noise HEMT
HiRel Discrete and Microwave Semiconductor Conventional AlGaAs/GaAs HEMT (For new design we recommend to use our pseudo-morphic HEMT CFY67) For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain Space Qualified ESA/SCC Detail Spec. No.: 5613/002, Type Variant No.s 01 to 04
4
3
1
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration 1 2 S 3 D 4 S
Package
CFY66-08 (ql) CFY66-08P (ql) CFY66-10 (ql) CFY66-10P (ql)
-
see below
G
Micro-X
CFY66-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
on request on request on request on request
(see order instructions for ordering example)
Semiconductor Group
1 of 8
Draft D, September 99
CFY66
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation
2)
Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol
Values 3.5 4.5 - 3... + 0.5 60 2 + 10 150 - 65... + 150 200 230
Unit V V V mA mA dBm °C °C mW °C
So...
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