HiRel K-Band GaAs Super Low Noise HEMT
CFY67 HiRel K-Band GaAs Super Low Noise HEMT • • • • • • •
HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlG...
Description
CFY67 HiRel K-Band GaAs Super Low Noise HEMT
HiRel Discrete and Microwave Semiconductor Pseudo-morphic AlGaAs/InGaAs/GaAs HEMT For professional super low-noise amplifiers For frequencies from 500 MHz to > 20 GHz Hermetically sealed microwave package Super low noise figure, high associated gain Space Qualified ESA/SCC Detail Spec. No.: 5613/004, Type Variant No.s 01 to 04, 05 foreseen (tbc.)
4
3
1
2
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration 1 2 S 3 D 4 S
Package
CFY67-06 (ql) CFY67-08 (ql) CFY67-08P (ql) CFY67-10 (ql) CFY67-10P (ql)
-
see below
G
Micro-X
CFY67-nnl: specifies gain and output power levels (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality, H: High Rel Quality, S: Space Quality, ES: ESA Space Quality,
Ordering Code: Ordering Code: Ordering Code: Ordering Code:
Q62702F1699 on request on request Q62702F1699
(see order instructions for ordering example)
Semiconductor Group
1 of 10
Draft D, September 99
CFY67
Maximum Ratings
Parameter Drain-source voltage Drain-gate voltage Gate-source voltage (reverse / forward) Drain current Gate forward current RF Input Power, C- and X-Band 1) Junction temperature Storage temperature range Total power dissipation
2)
Symbol VDS VDG VGS ID IG PRF,in TJ Tstg Ptot Tsol
Values 3.5 4.5 - 3... + 0.5 60 2 + 10 150 - 65... + 150 200 230
Unit V V V mA mA dBm °C °C mW °C
Soldering temperature 3)...
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