DatasheetsPDF.com

5M0280R Dataheets PDF



Part Number 5M0280R
Manufacturers Fairchild Semiconductor
Logo Fairchild Semiconductor
Description Power Switch
Datasheet 5M0280R Datasheet5M0280R Datasheet (PDF)

www.fairchildsemi.com KA5x02xx-SERIES KA5H0265RC, KA5M0265R, KA5L0265R, KA5H02659RN/KA5M02659RN, KA5H0280R, KA5M0280R Fairchild Power Switch(FPS) Features • Precision Fixed Operating Frequency (100/67/50kHz) • Low Start-up Current (Typ. 100uA) • Pulse by Pulse Current Limiting • Over Load Protection • Over Voltage Protection (Min. 25V) • Internal Thermal Shutdown Function • Under Voltage Lockout • Internal High Voltage Sense FET • Auto-Restart Mode Description The Fairchild Power Switch(FPS.

  5M0280R   5M0280R



Document
www.fairchildsemi.com KA5x02xx-SERIES KA5H0265RC, KA5M0265R, KA5L0265R, KA5H02659RN/KA5M02659RN, KA5H0280R, KA5M0280R Fairchild Power Switch(FPS) Features • Precision Fixed Operating Frequency (100/67/50kHz) • Low Start-up Current (Typ. 100uA) • Pulse by Pulse Current Limiting • Over Load Protection • Over Voltage Protection (Min. 25V) • Internal Thermal Shutdown Function • Under Voltage Lockout • Internal High Voltage Sense FET • Auto-Restart Mode Description The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitrycompared to discrete MOSFET and controller or RCC switching converter solution. The Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter. TO-220F-4L 8-DIP TO220-5L Internal Block Diagram 1 1. GND 2. Drain 3. Vcc 4. FB 1 1 1.6.7.8. Drain 1. Drain 2. GND 2. GND 3. Vcc 3. Vcc 4. FB 4. FB 5. NC 5. S/S VCC 32V * Soft Start uA 5V FB 5µA 1mA 2.5R 9V 1R + 5V Internal Vref bias Good logic OSC − + S Q R L.E.B 0.1V 7.5V − + Thermal S/D 27V − OVER VOLTAGE S/D S Q R Power on reset * KA5H0265RC ©2003 Fairchild Semiconductor Corporation SFET DRAIN GND Rev.1.0.4 KA5X02XX-SERIES Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Characteristic KA5x0265xRx Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. KA5x0280R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range Total Power Dissipation Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. Symbol VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Darting TJ TA TSTG VDGR VGS IDM ID ID EAS VCC,MAX VFB PD Darting TJ TA TSTG Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C Value 650 ±30 8.0 2.0 1.3 68 30 -0.3 to VSD 42 0.33 +160 -25 to +85 -55 to +150 800 ±30 8.0 2.0 1.3 90 30 -0.3 to VSD 35 0.28 +160 -25 to +85 -55 to +150 Unit V V ADC ADC ADC mJ V V W W/°C °C °C °C V V ADC ADC ADC mJ V V W W/°C °C °C °C 2 KA5X02XX-SERIES Electrical Characteristics (SFET Part) (Ta=25°C unless otherwise specified) Parameter KA5x0265xRx Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge KA5x0280R Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd Condition Min. VGS=0V, ID=50µA VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125°C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) 650 - - 1.5 - - - VGS=0V, ID=50µA VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125°C VGS=10V, ID=0.5A VDS=50V, ID=0.5A VGS=0V, VDS=25V, f=1MHz VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature) VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature) 800 - - 1.5 - - - Typ. Max. Unit - -V - 50 µA - 200 µA 5.0 6.0 2.5 550 38 17 20 15 55 25 - Ω S pF nS - 35 3 - nC 12 - - -V - 50 µA - 200 µA 5.6 7.0 2.5 250 52 25 21 28 77 24 - Ω S pF nS .


5M02659RN 5M0280R 4401


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)