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www.fairchildsemi.com
KA5x02xx-SERIES
KA5H0265RC, KA5M0265R, KA5L0265R, KA5H02659RN/KA5M02659RN, KA5H0280R, KA5M0280R Fairchild Power Switch(FPS)
Features
• Precision Fixed Operating Frequency (100/67/50kHz) • Low Start-up Current (Typ. 100uA) • Pulse by Pulse Current Limiting • Over Load Protection • Over Voltage Protection (Min. 25V) • Internal Thermal Shutdown Function • Under Voltage Lockout • Internal High Voltage Sense FET • Auto-Restart Mode
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, leading edge blanking, optimized gate turn-on/ turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitrycompared to discrete MOSFET and controller or RCC switching converter solution. The Fairchild Power Switch(FPS) can reduce total component count, design size, weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost-effective design in either a flyback converter or a forward converter.
TO-220F-4L
8-DIP
TO220-5L
Internal Block Diagram
1 1. GND 2. Drain 3. Vcc 4. FB
1
1
1.6.7.8. Drain
1. Drain
2. GND
2. GND
3. Vcc
3. Vcc
4. FB
4. FB
5. NC
5. S/S
VCC
32V
* Soft Start
uA
5V
FB 5µA 1mA 2.5R 9V 1R
+
5V Internal Vref bias
Good logic
OSC
− +
S Q
R
L.E.B
0.1V
7.5V −
+ Thermal S/D 27V −
OVER VOLTAGE S/D
S Q
R
Power on reset
* KA5H0265RC
©2003 Fairchild Semiconductor Corporation
SFET
DRAIN
GND
Rev.1.0.4
KA5X02XX-SERIES
Absolute Maximum Ratings
(Ta=25°C, unless otherwise specified)
Characteristic KA5x0265xRx Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range. KA5x0280R Drain-Gate Voltage (RGS=1MΩ) Gate-Source (GND) Voltage Drain Current Pulsed (1) Continuous Drain Current (TC=25°C) Continuous Drain Current (TC=100°C) Single Pulsed Avalanche Energy (2) Maximum Supply Voltage Analog Input Voltage Range
Total Power Dissipation
Operating Junction Temperature. Operating Ambient Temperature. Storage Temperature Range.
Symbol
VDGR VGS IDM
ID ID EAS VCC,MAX VFB PD Darting TJ TA TSTG
VDGR VGS IDM
ID ID EAS VCC,MAX VFB PD Darting TJ TA TSTG
Note: 1. Repetitive rating: Pulse width limited by maximum junction temperature 2. L = 51mH, starting Tj = 25°C
Value
650 ±30 8.0 2.0 1.3 68 30 -0.3 to VSD 42 0.33 +160 -25 to +85 -55 to +150
800 ±30 8.0 2.0 1.3 90 30 -0.3 to VSD 35 0.28 +160 -25 to +85 -55 to +150
Unit
V V ADC ADC ADC mJ V V W W/°C °C °C °C
V V ADC ADC ADC mJ V V W W/°C °C °C °C
2
KA5X02XX-SERIES
Electrical Characteristics (SFET Part)
(Ta=25°C unless otherwise specified)
Parameter KA5x0265xRx Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge
KA5x0280R Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Static Drain-Source on Resistance (Note) Forward Transconductance (Note) Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn on Delay Time Rise Time Turn Off Delay Time Fall Time Total Gate Charge (Gate-Source+Gate-Drain) Gate-Source Charge Gate-Drain (Miller) Charge
Symbol
BVDSS
IDSS
RDS(ON) gfs Ciss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd
BVDSS
IDSS
RDS(ON) gfs Ciss Coss Crss
td(on) tr
td(off) tf Qg
Qgs Qgd
Condition
Min.
VGS=0V, ID=50µA VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125°C VGS=10V, ID=0.5A VDS=50V, ID=0.5A
VGS=0V, VDS=25V, f=1MHz
VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature)
VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature)
650 -
-
1.5
-
-
-
VGS=0V, ID=50µA VDS=Max. Rating, VGS=0V VDS=0.8Max. Rating, VGS=0V, TC=125°C VGS=10V, ID=0.5A VDS=50V, ID=0.5A
VGS=0V, VDS=25V, f=1MHz
VDD=0.5B VDSS, ID=1.0A (MOSFET switching time is essentially independent of operating temperature)
VGS=10V, ID=1.0A, VDS=0.5B VDSS (MOSFET switching time is essentially independent of operating temperature)
800 -
-
1.5
-
-
-
Typ. Max. Unit
- -V - 50 µA
- 200 µA
5.0 6.0 2.5 550 38 17 20 15 55 25 -
Ω S pF
nS
- 35 3 - nC 12 -
- -V - 50 µA
- 200 µA
5.6 7.0 2.5 250 52 25 21 28 77 24 -
Ω S pF
nS
.