Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4402
4402 N-Channel Enhancement Mode Field Effect Transistor
Genera...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4402
4402 N-Channel Enhancement Mode Field Effect
Transistor
General Description
The AO4402 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications.
Features
VDS (V) = 30V ID = 12A RDS(ON) < 14mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) RDS(ON) < 22mΩ (VGS = 2.5V)
SD SD SD GD
SOIC-8
D
G S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TA=25°C
Current A
TA=70°C
Pulsed Drain Current B
ID IDM
Power Dissipation
TA=25°C TA=70°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 30 ±12 12 10 80 3 2.1
-55 to 150
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 23 48 12
Max 40 65 16
Units V V
A
W °C
Units °C/W °C/W °C/W
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
4402
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=24V, VGS=0V
IGSS VGS(th) ID(ON)
Gate-Body leakage current Gate Threshold Voltage On state drain current
VDS=0V, VGS= ±12V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=10V,...