4409

Shenzhen Tuofeng Semiconductor Technology co., LTD 4409 P-Channel Enhancement-Mode MOSFET (-30V, -12A) PRODUCT SUMMARY VDSS ID RDS(on) (m-ohm) Max -30V -12A 12 @ VGS = -10V ,ID=-12A 15 @ VGS = -4.5V ,ID=-10A Features · Advanced Trench Process Technology · High Density Cell Design for Ultra Low On-Resistance · Lead free product is acquired · SOP-8 Absolute Maximum Ratings (TA=25oC, unless otherwise noted) Symbol VDS VGS ID Drain-Source Voltage Gate-Source Voltage Parameter Drain Current @TA=25oC IDM Drain Current (Pulsed) a IAR Avalanche Current EAR Repetitive Avalanche Energy L=0.3mH Total Power Dissipation @TA=25oC PD Total Power Dissipation @TA=75oC IS Maximum Diode Forward Current Tj, Tstg RqJA Operating Junction and Storage Temperature Range Thermal Resistance Junction to Ambient (PCB mounted)b a: Repetitive Rating: Pulse width limited by the maximum junction temperation. b: 1-in2 2oz Cu PCB board Pin 1 / 2 / 3: Source Pin 4: Gate Pin 5 / 6 / 7 / 8: Drain Ratings -30 ±20 -12 -60 30 135 3 2.1 -2.1 -55 to +150 50 Units V V A A A mJ W A °C °C/W 1 Shenzhen Tuofeng Semiconductor Technology co., LTD 4409 Electrical Characteristics (TA=25°C, unless otherwise noted) Symbol Characteristic Test Conditions · Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA IDSS Zero Gate Voltage Drain Current VDS=-24V, VGS=0V IGSS Gate-Body Leakage Current · On Characteristicsc VGS(th) Gate Threshold Voltage IDS(on) On State Drain Curren...