4501

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4501 N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement ▼ Low On-resistance ▼ Fast Switching Performance Description D2 D2 D1 D1 SO-8 G2 S2 G1 S1 The SO-8 package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. N-CH P-CH BVDSS RDS(ON) ID BVDSS RDS(ON) ID D1 30V 28mΩ 7A -30V 50mΩ -5.3A D2 G1 G2 S1 Absolute Maximum Ratings Symbol Parameter VDS VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ TSTG TJ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Rating N-channel P-channel 30 -30 ±20 ±20 7.0 -5.3 5.8 -4.7 20 -20 2 0.016 -55 to 150 -55 to 150 Thermal Data Symbol Rthj-a Parameter Maximum Thermal Resistance, Junction-ambient3 Value 62.5 S2 Units V V A A A W W/℃ ℃ ℃ Unit ℃/W 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4501 N-CH Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS RDS(ON) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Drain-Source Leakage Current (Tj=70oC) Gate-Source Leak...