4542

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4542 Dual Enhancement Mode MOSFET (N-and P-Channel) Features Pin Description N-Channel 30V/6.9A, RDS(ON)=27.44mΩ @VGS =10V R DS(ON)=41.16mΩ @VGS =4.5V P-Channel -30V/-6.9A, R DS(ON)=32.00mΩ @VGS =10.0V R DS(ON)=50.00mΩ @VGS =4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SO-8 Package S1 1 G1 2 S2 3 G2 4 8 D1 7 D1 6 D2 5 D2 SO-8 D1 D1 S2 G2 G1 Applications Power Management in Notebook Computer , Portable Equipment and Battery Powered Systems. S1 N-Channel MOSFET D2 D2 P-Channel MOSFET 1 Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4542 Absolute Maximum Ratings (TA = 25°C unless otherwise noted) Symbol Parameter VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Maximum Drain Current – Continuous Maximum Drain Current – Pulsed PD Maximum Power Dissipation TA=25 C ° TJ Maximum Junction Temperature TSTG Storage Temperature Range RθjA Thermal Resistance – Junction to Ambient * Surface Mounted on FR4 Board, t ≤ 10 sec. N-Channel 30 ±20 6.9 28 P-Channel -30 ±20 -6.9 -20 22 150 -55 to 150 62.5 Unit V A W °C °C °C/W Electrical Characteristics (T A = 25°C unless otherwise noted) Symbol Parameter Test Condition Static BVDSS Drain-Source Breakdown Voltage VGS=0V , IDS=250µA IDSS Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage VDS=24V , VGS=0V VDS=-24V , VGS=0V VDS=VGS , IDS=250µA VDS=VGS , IDS=-250µA IGSS Gate Leakage C...