4812

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4812 4812 Dual N-Channel Enhancement Mode Field Effect Transistor General Description The 4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters. 4812 is Pb-free (meets ROHS & Sony 259 specifications). 4812 is a Green Product ordering option. 4812 is electrically identical. Features VDS (V) = 30V ID = 8.0A (VGS = 10V) RDS(ON) < 22mΩ (VGS = 10V) RDS(ON) < 34mΩ (VGS = 4.5V) S2 1 8 D2 G2 2 7 D2 S1 3 6 D1 G1 4 5 D1 SOIC-8 D1 D2 G1 S1 G2 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current A TA=25°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 8.0 30 2 1.44 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 35 Max 62.5 110 40 Units V V A W °C Units °C/W °C/W °C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4812 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions ID=250µA, VGS=0V VDS=24V, VGS=0V IGS...