4622

Shenzhen Tuofeng Semiconductor Technology Co., Ltd 4622 20V Dual P + N-Channel MOSFET Product Summary N-Channel P-Channel VDS (V) = 20V -20V ID = 6.4A (VGS=4.5V) -6.4A (VGS =-4.5V) RDS(ON) RDS(ON) < 23mΩ (VGS=4.5V) < 40mΩ(VGS = -4.5V) < 30mΩ (VGS=2.5V) < 50mΩ (VGS = -2.5V) 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested SOIC-8 Top View S1 G1 S2 G2 D1 D1 D2 D2 D1 D2 G1 G2 S1 n-channel S2 p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ±16 Continuous Drain Current AF TA=25°C ID 6.4 Pulsed Drain Current B IDM 35 Power Dissipation TA=25°C Avalanche Current B Repetitive avalanche energy 0.3mH B Junction and Storage Temperature Range PD IAR EAR TJ, TSTG 2 13 25 -55 to 150 Max p-channel -20 ±12 -6.4 -25 2 13 25 -55 to 150 Thermal Characteristics: n-channel and p-channel Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A t ≤ 10s Steady-State Maximum Junction-to-Lead C Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Steady-State t ≤ 10s Steady-State Maximum Junction-to-Lead C Steady-State Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max 62.5 110 40 62.5 110 40 Units V V A W A mJ °C Units °C/W °C/W °C/W °C/W °C/W °C/W Shenzhen Tuofeng Semiconductor Technology Co., Ltd N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) 4622 Symbo...