9926A Datasheet PDF Download, Tuofeng Semiconductor





(PDF) 9926A Datasheet Download

Part Number 9926A
Description Dual N-Channel MOSFET
Manufacture Tuofeng Semiconductor
Total Page 4 Pages
PDF Download Download 9926A Datasheet PDF

Features: Shenzhen Tuofeng Semiconductor Technolog y Co., Ltd SMD Type MOSFET Dual N-Ch annel MOSFET 9926A Features 6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V 5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V. Absol ute Maximum Ratings Ta = 25 Parameter D rain-Source Voltage Gate-Source Voltage Continuous Drain Current Ta=25 Pulsed Drain Current Maximum Power Dissipatio n TA = 25 TA = 70 Symbol VDS VGS ID I DM PD 10 secs Steady Sate 20 10 6 30 2 .0 1.25 1.3 0.8 Unit V V A A W Therma l Resistance Ratings Parameter Maximu m Junction-to-Ambient* Maximum Junction -to-Foot (Drain) t 10 sec Steady State Steady State * Surface Mounted on 1" X 1"FR4 Board. Symbol RthJA RthJF Typ 50 80 30 Max Unit 62.5 100 /W 40 She nzhen Tuofeng Semiconductor Technology Co., Ltd SMD Type MOSFET 9926A Elec trical Characteristics Ta = 25 Paramete r Drain-Source Breakdown Voltage Zero G ate Voltage Drain Current Symbol Test conditons VDSS IDSS VGS = 0 V, ID = 2 50 A VDS =16V , VGS = 0V Min Typ Max Unit 20 V 1 uA Gate-Body.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET
9926A
Features
6A, 20 V. rDS(on) = 0.030 @ VGS = 4.5 V
5.2A, 20 V rDS(on) = 0.040 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta=25
Pulsed Drain Current
Maximum Power Dissipation
TA = 25
TA = 70
Symbol
VDS
VGS
ID
IDM
PD
10 secs Steady Sate
20
10
6
30
2.0 1.25
1.3 0.8
Unit
V
V
A
A
W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot (Drain)
t 10 sec
Steady State
Steady State
* Surface Mounted on 1" X 1"FR4 Board.
Symbol
RthJA
RthJF
Typ
50
80
30
Max Unit
62.5
100 /W
40

           






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