9926B Datasheet: Dual N-Channel MOSFET





9926B Dual N-Channel MOSFET Datasheet

Part Number 9926B
Description Dual N-Channel MOSFET
Manufacture Tuofeng Semiconductor
Total Page 4 Pages
PDF Download Download 9926B Datasheet PDF

Features: Shenzhen Tuofeng Semiconductor Technolog y Co., Ltd SMD Type MOSFET Dual N-Ch annel MOSFET 9926B Features 6.5A, 20 V . rDS(on) = 0.022 @ VGS = 4.5 V 5.5A, 2 0 V rDS(on) = 0.035 @ VGS = 2.5 V. Abs olute Maximum Ratings Ta = 25 Parameter Drain-Source Voltage Gate-Source Volta ge Continuous Drain Current Ta=25 Pul sed Drain Current Maximum Power Dissipa tion TA = 25 TA = 70 Symbol VDS VGS I D IDM PD 10 secs Steady Sate 20 10 6 .5 30 2.0 1.25 1.3 0.8 Unit V V A A W Thermal Resistance Ratings Parameter Maximum Junction-to-Ambient* Maximum Junction-to-Foot (Drain) t 10 sec Stea dy State Steady State * Surface Mounte d on 1" X 1"FR4 Board. Symbol RthJA Rt hJF Typ 50 80 30 Max Unit 62.5 100 /W 40 Shenzhen Tuofeng Semiconductor Tec hnology Co., Ltd SMD Type MOSFET 992 6B Electrical Characteristics Ta = 25 Parameter Drain-Source Breakdown Voltag e Zero Gate Voltage Drain Current Symb ol Testconditons VDSS VGS = 0 V, ID = 250 A IDSS VDS =16V , VGS = 0V Min Typ Max Unit 20 V 1 uA G.

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Shenzhen Tuofeng Semiconductor Technology Co., Ltd
SMD Type
MOSFET
Dual N-Channel MOSFET
9926B
Features
6.5A, 20 V. rDS(on) = 0.022 @ VGS = 4.5 V
5.5A, 20 V rDS(on) = 0.035 @ VGS = 2.5 V.
Absolute Maximum Ratings Ta = 25
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current Ta=25
Pulsed Drain Current
Maximum Power Dissipation
TA = 25
TA = 70
Symbol
VDS
VGS
ID
IDM
PD
10 secs
Steady Sate
20
10
6.5
30
2.0 1.25
1.3 0.8
Unit
V
V
A
A
W
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient*
Maximum Junction-to-Foot (Drain)
t 10 sec
Steady State
Steady State
* Surface Mounted on 1" X 1"FR4 Board.
Symbol
RthJA
RthJF
Typ
50
80
30
Max Unit
62.5
100 /W
40

           






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