Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8810
Common-Drain Dual N-Channel Enhancement Mode Field Effect Trans...
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
8810
Common-Drain Dual N-Channel Enhancement Mode Field Effect
Transistor
General Description
The 8810 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product 8810 is Pb-free (meets ROHS & Sony 259 specifications). 8810 is electrically identical.
Features
VDS (V) = 20V ID = 6A (V GS = 4.5V) RDS(ON) < 22mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 2.5V) ESD Rating: 2000V HBM
D1/D2 S1 S1 G1
TSSOP-8 Top View
18 27 36 45
D1/D2 S2 S2 G2
D1 D2 G1 G2
S1 S2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current A
TA=25°C
ID
Pulsed Drain Current B
IDM
Power Dissipation A TA=25°C
PD
Junction and Storage Temperature Range TJ, TSTG
Maximum 20 ±8
6 30
1.5 -55 to 150
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
t ≤ 10s Steady-State Steady-State
Symbol RθJA RθJL
Typ 64 89 53
Max 83 120 70
Units V V
A
W °C
Units °C/W °C/W °C/W
Shenzhen Tuofeng Semiconductor Technology Co., Ltd
Electrical Characteristics (T =25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions ID=250µA, VGS=0V
IDSS Zero Gate Voltage Drain Curren...