30V Dual N-Channel MOSFET
AON2812
30V Dual N-Channel AlphaMOS
General Description
• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Lo...
Description
AON2812
30V Dual N-Channel AlphaMOS
General Description
Trench Power AlphaMOS (αMOS LV) technology Low RDS(ON) Low Gate Charge ESD protection RoHS and Halogen-Free Compliant
Applications
Battery protection switch Mobile device battery charging and discharging Load switch
Product Summary
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) RDS(ON) (at VGS=2.5V)
Typical ESD protection
30V 4.5A < 37mΩ < 45mΩ < 70mΩ
HBM Class 3A
Top View
DFN 2x2 Bottom View
D1 G2 S2 D1
Pin 1
D2
S1 G1 D2
Pin 1
Orderable Part Number
AON2812
Package Type
DFN 2x2
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain TA=25°C
Current G
TA=70°C
Pulsed Drain Current C
TA=25°C Power Dissipation B TA=70°C
VGS ID IDM PD
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics
Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
t ≤ 10s Steady-State
Symbol RθJA
Typ 40 65
D 1 D2
G1 G2
S1 S2
Form
Tape & Reel
Minimum Order Quantity
3000
Maximum 30 ±12 4.5 3.5 18 2.5 1.6
-55 to 150
Units V V
A
W °C
Max Units 50 °C/W 80 °C/W
Rev.1.0: February 2014
www.aosmd.com
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Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol Parameter
Conditions
STATIC PARAMETERS
BVDSS IDSS IGSS VGS(th)
RDS(ON)
gFS VSD IS
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current
ID=250µA, VGS=0V VDS=30V, VGS=0V
Gate-Body leaka...
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