Document
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors
A733 TRANSISTOR(PNP )
TO-92
FEATURE Power dissipation
MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol VCBO VCEO VEBO IC PD TJ Tstg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Total Device Dissipation Junction Temperature Junction and Storage Temperature
Value -60 -50 -5 -100 250 150
-55-150
Units V V V mA
mW ℃ ℃
1. EMITTER 2. COLLECTOR 3. BASE
123
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
ELECTRICAL CHARACTERISTICS(Tamb=25℃ unless otherwise specified)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
Noise figure
Symbol V(BR)CBO V(BR)CEO V(BR)EBO
ICBO IEBO hFE VCE(sat) VBE
fT Cob
NF
Test conditions IC= -50uA,IE=0 IC= -1mA , IB=0 IE= -50uA, IC=0 VCB= -60 V , IE=0 VEB= -5 V , IC=0 VCE= -6 V, IC= -1mA IC= -100mA, IB=- 10mA VCE=-6V,IC=-1.0mA VCE=-6V,IC=-10mA VCB=-10V,IE=0,f=1MHZ VCE=-6V,IC=-0.3mA, Rg=10kΩ,f=100HZ
MIN -60 -50 -5
90
-0.58 100
TYP
200 -0.18 -0.62 180 4.5
MAX UNIT V V V
-0.1 uA -0.1 uA 600 -0.3 V -0.68 V
MHz 6 pF
6 20 dB
CLASSIFICATION OF hFE
Rank
Range
R 90-180
Q 135-270
P 200-400
K 300-600
Typical Characteristics
A733
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